Transcend TS512MSK64V3N-I Fiche technique

Naviguer en ligne ou télécharger Fiche technique pour Modules de mémoire Transcend TS512MSK64V3N-I. Transcend Transcend TS512MSK64V3N-I memory module Manuel d'utilisatio

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204PIN DDR3 1333 SO-DIMM
2Rank 4GB With 256Mx8 CL9
Transcend Information Inc.
1
Description
The TS512MSK64V3N-I is a 512M x 64bits DDR3-1333
2Rank SO-DIMM. The TS512MSK64V3N-I consists of
16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and
a 2048 bits serial EEPROM on a 204-pin printed circuit
board. The TS512MSK64V3N-I is a Dual In-Line Memory
Module and is intended for mounting into 204-pin edge
connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
Operating Temperature : -40°C to +85°C
Gold plating of PCB gold finger is 30u
RoHS compliant products.
JEDEC standard 1.5V ± 0.075V Power supply
VDDQ=1.5V ± 0.075V
Clock Freq: 667MHZ for 1333Mb/s/Pin.
Programmable CAS Latency: 6, 7, 8, 9
Programmable Additive Latency (Posted /CAS): 0,
CL-2 or CL-1 clock
Programmable /CAS Write Latency (CWL) = 7
(DDR3-1333)
8 bit pre-fetch
Burst Length: 4, 8
Bi-directional Differential Data-Strobe
Internal calibration through ZQ pin
On Die Termination with ODT pin
Serial presence detect with EEPROM
Asynchronous reset
Placement
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PCB: 09-2841
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Résumé du contenu

Page 1

TTTSSS555111222MMMSSSKKK666444VVV333NNN---III 204PIN DDR3 1333 SO-DIMM 2Rank 4GB With 256Mx8 CL9 Transcend Information Inc. 1 Description The

Page 2

TTTSSS555111222MMMSSSKKK666444VVV333NNN---III 204PIN DDR3 1333 SO-DIMM 2Rank 4GB With 256Mx8 CL9 Transcend Information Inc. 2 Dimensions Side

Page 3

TTTSSS555111222MMMSSSKKK666444VVV333NNN---III 204PIN DDR3 1333 SO-DIMM 2Rank 4GB With 256Mx8 CL9 Transcend Information Inc. 3 Pinouts: Pin No

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