T
T
T
S
S
S
5
5
5
1
1
1
2
2
2
M
M
M
S
S
S
K
K
K
6
6
6
4
4
4
V
V
V
3
3
3
N
N
N
-
-
-
I
I
I
204PIN DDR3 1333 SO-DIMM
2Rank 4GB With 256Mx8 CL9
Transcend Information Inc.
1
Description
The TS512MSK64V3N-I is a 512M x 64bits DDR3-1333
2Rank SO-DIMM. The TS512MSK64V3N-I consists of
16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and
a 2048 bits serial EEPROM on a 204-pin printed circuit
board. The TS512MSK64V3N-I is a Dual In-Line Memory
Module and is intended for mounting into 204-pin edge
connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
• Operating Temperature : -40°C to +85°C
• Gold plating of PCB gold finger is 30u
• RoHS compliant products.
• JEDEC standard 1.5V ± 0.075V Power supply
• VDDQ=1.5V ± 0.075V
• Clock Freq: 667MHZ for 1333Mb/s/Pin.
• Programmable CAS Latency: 6, 7, 8, 9
• Programmable Additive Latency (Posted /CAS): 0,
CL-2 or CL-1 clock
• Programmable /CAS Write Latency (CWL) = 7
(DDR3-1333)
• 8 bit pre-fetch
Burst Length: 4, 8
• Bi-directional Differential Data-Strobe
• Internal calibration through ZQ pin
• On Die Termination with ODT pin
• Serial presence detect with EEPROM
• Asynchronous reset
Placement
A
AA
AB
BB
B
D
DD
D
E
EE
E
C
CC
C
F
FF
F
G
GG
G
H
HH
H
I
II
I
J
JJ
J
K
KK
K
PCB: 09-2841
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